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电沉积法制备硫锡半导体纳米棒网络薄膜及其性能表征

发布时间:2019-05-23 00:30
【摘要】: 硫锡化合物SnS、SnS2和Sn2S3作为半导体材料,具有直接光学带隙窄的特点,这使得它们在光伏发生器件,近红外探测器和光学记录介质等应用方面具有很大的研究价值。 本实验在前人研究的基础上,使用了一种新的电沉积液,采用恒电位电沉积法,成功制备了Sn2S3和SnS两种半导体薄膜材料。通过XRD、SEM、EDS、Mapping、XPS等表征手段,对沉积电位、退火温度、电沉积基底等工艺条件对薄膜结构、形貌及成分的影响进行了研究。最后通过UV-VIS-NIR, Hall test对制备的薄膜进行了光电性能的表征。 采用恒电位电沉积法,在Ni箔基底上研究了沉积电位、退火温度对薄膜结构、形貌及成分的影响。发现当沉积电位为-0.80 V时,制备出的薄膜为Sn2S3,而当沉积电位为-0.90V时,制备得到了SnS薄膜。经过不同温度的热处理,得出两种薄膜的最佳热处理温度为250℃。在同样条件下,于ITO基底上制备得到了Sn2S3和SnS薄膜,比较两种基底上制备得到的薄膜的形貌和成分,发现在ITO基底上得到的薄膜颗粒形貌更规整,尺寸更小,且Sn/S更加接近化学计量比。 对ITO基底上制备得到的Sn2S3薄膜和SnS薄膜,在氩气气氛下,于250℃进行了退火处理,得到了Sn2S3和SnS薄膜。发现经过退火处理后,Sn2S3薄膜的择优取向发生了改变,形成了由一维纳米棒组成的3D网络结构,薄膜的Sn/S由1/1.2变为1/1.23;SnS薄膜的择优取向同样发生了改变,颗粒形状由纳米颗粒变为纳米棒,薄膜的Sn/S由1.02/1变为1.49/1。 对退火前后的薄膜进行的光电性能表征表明,Sn2S3半导体薄膜退火前的光学带隙为1.87 eV,半导体类型为p型,而退火后薄膜的光学带隙变为1.65 eV,半导体类型变为n型;SnS半导体薄膜退火前的光学带隙为1.75 eV,半导体类型为n型,退火后薄膜的光学带隙变为1.54 eV,半导体类型变为p型。
[Abstract]:As semiconductor materials, thiotin compounds SnS,SnS2 and Sn2S3 have the characteristics of narrow direct optical band gap, which makes them have great research value in photovoltaic devices, near infrared detector and optical recording medium. On the basis of previous studies, two kinds of semiconductor thin films, Sn2S3 and SnS, were successfully prepared by potentiostatic electrodeposition. The effects of deposition potential, annealing temperature and electrodeposition substrate on the structure, morphology and composition of the films were studied by XRD,SEM,EDS,Mapping,XPS. Finally, the photoelectric properties of the films were characterized by UV-VIS-NIR, Hall test. The effects of deposition potential and annealing temperature on the structure, morphology and composition of Ni foil were studied by potentiostatic electrodeposition. It is found that when the deposition potential is-0.80V, the prepared thin films are Sn2S3, and when the deposition potential is-0.90V, SnS thin films are prepared. After heat treatment at different temperatures, the optimum heat treatment temperature of the two films is 250 鈩,

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